Negative luminescence in semiconductors: a retrospective view

Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR.     

光放大器前置可调光学滤波器

介绍Ｆ－Ｐ干涉滤波器实现中心波长可调的两种机理，给出通过改变腔距来改变中心波工的滤波器的典型结构，并且给出了相应的电压驱动电路，实验表明选择合适的光放大器前置滤波器可以提高系统的灵敏度。     

星载光学系统遮光罩消杂光结构优化设计方法

本文对星载光学系统遮光罩消杂光结构的优化设计做了初步探讨。提出了遮光罩和挡光环消杂光设计的基本原则。给出了一种二级遮光罩结构寸的优化设计方法和一种遮光罩内壁上挡光环位置优化设计方法,并对一级和二级遮光罩进行了初步的分析比较。     

一个数学建模问题的简单解法

银行利率给出了一个简单计算方法 ,这种方法更符合中学生思维的习惯 .     

环境光对PE塑料薄膜近红外激光拉曼光谱的影响

探讨了环境光自然光和室内荧光灯光的存在,对PE透明塑料薄膜的近红外激光拉曼光谱的影响.研究表明不同的环境光,会对近红外拉曼光谱产生不同的明显特征峰.自然光干扰产生的是以倒峰群形式为主,而室内荧光灯光造成的干扰主要以尖锐的脉冲峰形式.虽干扰表现形式不同,但都有严重地影响,在测定时一定要引起重视,不能忽略.建议在进行透明塑料近红外拉曼光谱检测时,须在暗室或暗罩遮光保护中进行,以完全隔离环境光的影响.     

Determination of the boiling point distribution of sulfur compounds in light cycle oil using GC with a flame photometric detector and pyrolyzer

A method has been developed to determine the boiling point distribution of sulfur compounds in light cycle oils (LCO'S). The method chosen for this analysis was GC with a flame photometric detector (FPD) and pyrolyzer. Tests were carried out to evaluate the recovery efficiency, repeatability, and accuracy of the method. Repeatabilities within 2% were obtained. The recovery of benzothiophenes and dibenzothiophenes was close to 100%; this was important because these are the major sulfur components in LCO's. No hydrocarbon or solvent interferences were observed with the use of the pyrolyzer, even for a 95% solvent level. Comparison with results from other techniques showed that the method accurately determined the levels of sulfur compounds in the LCO boiling point range.     

Gain competition effect in dual-wavelength dye lasers

In this paper, we present a theoretical model for the gain competition in dual-wavelength dye lasers. For this purpose the rate equations under the steady-state conditions have been used. The degree of the gain competition is shown to depend on the polarization of the two laser beams. The dependence of the gain competition on various working parameters such as pumping power, dye concentration and the reorientation rate of the molecules or solvent viscosity is studied for two different cases of parallel and orthogonal polarizations. The results of our model show dramatically different behaviors in the two proposed cases.     

Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared

In this paper we outline the use of resonant-cavity enhancement for increasing the exterior coupling efficiency of photodetectors and light-emitting diodes (LEDs) in the mid-infrared (MIR) spectral region. This method is potentially very important in the MIR because encapsulation is not presently feasible due to the lack of suitable materials. Among other potential applications, resonant-cavity-enhanced (RCE) photodetectors and LEDs could be particularly suitable for greenhouse gas detection because of their ‘pre-tunable’ spectrally narrowed resonantly enhanced peaks. We also present the optical characterization of an InAs RCE photodetector aimed at the detection of methane gas (λ≈3.3 μm), and an InAs/InAs_0.91Sb_0.09 resonant-cavity LED (RCLED) aimed at carbon dioxide gas (λ≈4.2 μm). The high peak responsivity of the RCE photodetector was 34.7 A/W at λ=3.14 μm, and the RCLED peaked at λ=3.96 μm. These are among the longest operating wavelengths for III–V RCE photodetectors and RCLEDs reported in the literature.     

Surface roughness investigation of semi-conductor wafers

Conventionally, surface roughness is predominantly determined through the use of stylus instruments. However, there are certain limitations involved in the method, particularly when a test specimen, such as a silicon wafer, has a smooth mirror-like surface. Hence, it is necessary to explore alternative non-contact techniques. Light scattering has recently been gaining popularity as an optical technique to provide prompt and precise inspection of surface roughness. In this paper, the total integrated scattering (TIS) model is modified to retrieve parameters on surface micro-topography through light scattering. The applicability of the proposed modified TIS model is studied and compared with an atomic force microscope. Experimental results obtained show that the proposed technique is highly accurate for measuring surface roughness in the nanometer range.